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| Datasheet File OCR Text: |
| Central CMPT3019 NPN SILICON TRANSISTOR DESCRIPTION TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMPT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general purpose amplifier applications. Marking Code is C3A. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM PD TJ,Tstg JA UNITS V V V A A mW oC oC/W 120 80 7.0 500 1.0 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE hFE fT Cob Cib NF TEST CONDITIONS MIN VCB=90V VEB=5.0V IC=100A 120 IC=30mA 80 IE=100A 7.0 IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA VCE=10V, IC=0.1mA 50 VCE=10V, IC=10mA 90 VCE=10V, IC=150mA 100 VCE=10V, IC=500mA 50 VCE=10V, IC=50mA, f=1.0MHz 100 VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=100mA, RS=1k, f=1.0kHz MAX 10 10 UNITS nA nA V V V V V V 0.2 0.5 1.1 300 MHz pF pF dB 12 60 4.0 166 All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 167 |
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